A technique for obtaining epitaxial re-growth across phase boundaries was described which annihilated defects in samples that were implanted with high doses of C+, Ge+ or Er+ ions. The method was applied to the synthesis of SiGe alloys by means of high-dose Ge implantation. This showed that end-of-range defects were annihilated in samples that were implanted with 3 x 1016 Ge+/cm2, and that the formation of strain-related defects in Ge+-implanted samples (9 x 1016/cm2) was inhibited by the implantation of C+, followed by epitaxial re-growth across phase boundaries.

F.Cristiano, J.P.Zhang, R.J.Wilson, W.P.Gillin, P.L.F.Hemment: Nuclear Instruments and Methods in Physics Research B, 1995, 96[1-2], 265-70