Defects in (100) crystal wafers of n-type material, which had been produced by BF2+ implantation (90keV, 1014 to 5 x 1015/cm2), were characterized by using high-resolution X-ray diffractometry, integrated intensity measurements and diffuse X-ray scattering techniques. The diffraction curves revealed an implantation-induced broadening. From the half-widths, and from the absolute values of the integrated intensities, it was deduced that the implantation-induced damage increased rapidly and linearly up to a dose of 1015/cm2. Above this dose, the damage increased very slowly. The cluster size was found to decrease as the dose was increased. At the smallest doses, it was equal to 0.00015cm and decreased to about 0.0001cm at the highest dose. An exception occurred at a dose of 1015/cm2, where the size was about 0.00017cm. A new non-thermal annealing process was developed in order to remove implantation-induced damage. It was observed that the annealing treatment was most effective at doses of 1015 to 5 x 1015/cm2; and especially at 1015/cm2. At doses of 1014 and 5 x 1014/cm2, the degree of annealing was not appreciable. Investigations of annealed specimens also revealed the presence of interstitial clusters at all doses, except 5 x 1015/cm2; where vacancy clusters were observed.

K.Lal, G.Bhagavannarayana, G.S.Virdi: Solid State Phenomena, 1996, 47-48, 377-82