The lattice deformation which was produced by Ge+ implantation, and its evolution during annealing, were investigated by using deep-level transient spectroscopy and X-ray diffraction methods. Three types of defect level were observed. In as-implanted samples, at annealing temperatures of up to about 600C, well-known vacancy-related defects levels were observed. At about 500C, levels at Ec - 0.53eV and Ec - 0.28eV, which were related to defect complexes that contained Ge, appeared. They disappeared during annealing at 900 to 1000C. Two less-dominant defect levels, at Ec - 0.40eV and Ec - 0.15eV, were also observed upon annealing at 500 to 900C. They were related to defects at the boundary between recrystallized regions and the remainder of the crystal, and were not unique to Ge. It was concluded that the annealing behavior of the mechanical strain reflected the behavior of vacancy-related and Ge-related defects.

J.R.Suprun-Belevich, L.Palmetshofer: Nuclear Instruments and Methods in Physics Research B, 1995, 96[1-2], 245-8