Fourier transform infra-red spectroscopy (2.5 to 25), in transmission and reflection modes, was applied to P-implanted non-annealed or annealed layers. Particular attention was paid to the effect of the implantation and annealing temperatures upon the optical properties. A theoretical model was used to analyze variations in the concentration of activated free carriers.

A.Seas, M.E.Eleftheriou, C.Christofides, C.R.Theocharis: Nuclear Instruments and Methods in Physics Research B, 1995, 103[1], 46-55