The generation of stacking faults during the oxidation of Czochralski-type material was investigated. It was found that such stacking faults were markedly retarded in growth in the case of neutron irradiated samples. It was suggested that the inhibition of oxidation-induced stacking faults resulted from the interaction of neutron irradiated defects with O. That is, the growth and shrinkage of oxidation-induced stacking faults at the surface of a wafer depended upon the equilibrium between Si interstitials and vacancies. Vacancy-type defects in neutron irradiated material were easy to dissociate during annealing because of their low stability at high temperatures. All of the vacancies continuously diffused to the SiO2/Si interface, except in parts with interstitial-type defects. The consumption of vacancies was satisfied by diffusion, and the density of Si interstitials at the surface was kept in equilibrium. Therefore, the growth of oxidation-induced stacking faults at the wafer surface was inhibited.

Y.Li, Y.Ju, C.Liu, Y.Xu, H.Wang: Journal of Crystal Growth, 1996, 160[3-4], 250-2