The recombination activity of defects which had been introduced by the low-fluence high-energy proton irradiation of n-type or p-type substrates was studied by using non-destructive carrier lifetime measurement techniques. The carrier lifetime was related to the density of deep levels. The detrimental effect of 10 or 86MeV proton irradiation was compared with the carrier lifetime. It was deduced, from the lifetime temperature-dependence, that vacancy related defects were the predominant recombination centers in both n-type and p-type Si.

A.Kaniava, J.Vanhellemont, E.Simoen, C.Claeys, E.Gaubas: Solid State Phenomena, 1996, 47-48, 371-6