By using a capacitor structure, the effects of oxidation upon bulk trap and interface states near to the interface were investigated. Two peaks, at energy levels of 0.23eV (D1) and 0.40eV (D2) below the conduction-band edge, were observed by using the capacitance deep-level transient spectroscopy method. The deep-level transient spectroscopy results revealed characteristic interface states for the D1 peak. The interface state distribution which was obtained by using the capacitance-voltage method also had a high density (6.9 x 1012/cm2eV) peak at an energy level of 0.23eV below the conduction-band edge. The Si-O- dangling bonds were thought to be the source of the D1 peak. The annealing behavior of the D2 peak showed that D2 was a divacancy-related bulk trap. The capture cross-section and the trap density for the bulk trap, D2, were 2.06 x 10-15/cm2 and 1.8 x 1014/cm3, respectively. The density of D2 was significantly reduced after low-temperature post-metallization annealing.

Oxidation-Induced Traps near SiO2/SiGe Interface. C.G.Ahn, H.S.Kang, Y.K.Kwon, S.M.Lee, B.R.Ryum, B.K.Kang: Journal of Applied Physics, 1999, 86[3], 1542-7