It was recalled that extended defects, when studied using the electron beam-induced current technique, normally exhibited one of 2 different types of carrier recombination behavior. In the usual case, this could be accurately described by the Wilshaw model; in which the recombination mechanism was charge-controlled. When analyzed in terms of this model, quantitative electron beam-induced current experiments indicated that the small amount of recombination that was associated with deformation-induced dislocations which were produced at 650C or above, or at stacking faults, was due only to residual impurities. A state which was intrinsic to the dislocation was produced by deformation at 420C. There was also a less common type of recombination behavior, which was often associated with Ni contamination, and which could predominate at low temperatures. This type of recombination could not be modelled by using simple Shockley-Read-Hall recombination statistics.

P.R.Wilshaw, T.S.Fell: Journal of the Electrochemical Society, 1995, 142[12], 4298-304