Detailed measurements were made of the X-ray dose-dependence of a spectrally resolved X-ray induced luminescence in bulk high-purity amorphous material. The dose-dependence of the luminescence intensity was compared with that of the paramagnetic E’-center concentration in 2 types of silica. Clear evidence was found that the main features of the 2.6 and 2.75eV luminescence bands were due to the same radiation-induced defect, and that this defect was therefore related to the E’ center.

A.J.Miller, R.G.Leisure, V.A.Mashkov, E.L.Galeener: Physical Review B, 1996, 53[14], R8818-20