The structures of homo-epitaxial films which had been grown by means of chemical vapor deposition were studied by using cross-sectional transmission electron microscopy. Many interstitial dislocation loops were observed in the (001) interface. The internal regions grown on (11¯1) facets comprised stacking faults and twins, while those grown on the (001) face contained mainly interstitial dislocation loops which were aligned in rows along approximately <112> directions.

M.Tarutani, Y.Takai, R.Shimizu, T.Ando, M.Kamo, Y.Bando: Applied Physics Letters, 1996, 68[15], 2070-2