Damage production in 6H-type material was investigated after Ga and Sb implantation at temperatures ranging from 80 to 1473K. It was found that, at implantation temperatures above 573K, amorphization did not occur; even at high fluences. A decrease in the defect density with temperature was associated with a shift, in the defect distribution, towards the bulk. This was taken to indicate a change in the nature of the defects. In order to minimize the damage, implantation temperatures above about 1200K were necessary. A reduction in the damage concentration, at higher temperatures, was attributed to the substitutional incorporation of a fraction of the implanted ions. At 700K, 70% of the implanted Sb atoms were incorporated.

W.Wesch, A.Heft, E.Wendler, T.Bachmann, E.Glaser: Nuclear Instruments and Methods in Physics Research B, 1995, 96[1-2], 335-8