Film samples were implanted with 28Si and 24Mg, and structural studies of the thin films after annealing showed that native defects predominated over implanted dopant effects. The formation energies of the annealing-induced defects were estimated to range from 1.4 to 3.6eV. Implantation with Mg (40keV, 1014/cm2) led to a 3 orders of magnitude decrease in the free-carrier concentration, as compared with non-implanted material, up to an annealing temperature of 690C.

J.S.Chan, N.W.Cheung, L.Schloss, E.Jones, W.S.Wong, N.Newman, X.Liu, E.R.Weber, A.Gassman, M.D.Rubin: Applied Physics Letters, 1996, 68[19], 2702-4