Lattice defects in epilayers which had been grown onto 6H-SiC (00•1), by means of metalorganic vapor phase epitaxy, were studied by means of transmission electron microscopy. It was found that the predominant defects in the films were threading dislocations, and half-loops with Burgers vectors of 1/3<11•0>, [00•1] and 1/3<11•3>. Planar faults were also observed in the films, and were suggested to be inversion domain boundaries.

F.R.Chien, X.J.Ning, S.Stemmer, P.Pirouz, M.D.Bremser, R.F.Davis: Applied Physics Letters, 1996, 68[19], 2678-80