A new approach was used to deduce transport coefficients, for dopants and vacancies, from atomic jump frequencies in the presence of dopant or vacancy gradients. Results were presented for diffusion in vacancy gradients where there was an attractive potential between the dopant and the defect. It was demonstrated that, for a given vacancy gradient, not only the absolute value, but also the sign, of the dopant flux depended upon the range of the binding potential.

S.List, P.Pichler, H.Ryssel: Microelectronics Journal, 1995, 26[2-3], 261-4