It was recalled that the kick-out mechanism was thought to play an important role in cases such as the diffusion of Zn and Cr in GaAs. Asymptotic solutions were derived here for 1- and 2-dimensional surface-source problems. A mechanism for the destruction of self-interstitials was incorporated into the 1-dimensional case. It was found that the calculated diffusion profiles had shapes which were typical of diffusion systems in which the kick-out mechanism was believed to be active. Contours of constant impurity concentration were calculated for the 2-dimensional case, and some of them were found to exhibit the so-called bird’s beak shape which was frequently observed in experimental studies.

M.G.Meere, J.R.King: Zeitschrift für Angewandte Mathematik und Physik, 1995, 46[4], 546-65