A theory was developed for the effect of fluctuations, in the composition of a disordered solid solution upon the kinetics of misfit dislocations in semiconductor heterostructures. It was found that, as the film thickness was reduced, there was a transition from the normal linear dependence - of dislocation velocity upon dislocation length - to a sharper non-linear dependence.

B.V.Petukhov: Fizika i Tekhnika Poluprovodnikov, 1995, 29[1], 104-13 (Semiconductors, 1995, 29[1], 55-9)