Samples of B-doped and Sb-doped superlattices were used to investigate intrinsic point defect behavior, following the formation of TiSi2 or CoSi2 films from the co-deposited metals during annealing (850C, 1h, Ar). All of the samples exhibited the same slight interstitial undersaturation and vacancy supersaturation. Since TiSi2 and all of its precursor phases formed entirely by Si diffusion, and the CoSi + Si  CoSi2 transformation occurred via Co diffusion, this suggested that the diffusing species during film growth was not the governing factor in point-defect perturbation of the Si substrate.

S.B.Herner, K.S.Jones, H.J.Gossmann, R.T.Tung, J.M.Poate, H.S.Luftman: Applied Physics Letters, 1996, 68[20], 2870-2