The effect of TiSi2 formation upon native point defects was studied at temperatures of between 800 and 890C. Dopant superlattices of Sb and B were used to monitor the point defect behavior. It was found that there was an enhancement of Sb diffusion and a retardation of B diffusion, as compared with control samples without TiSi2. This indicated the existence of a vacancy supersaturation, and of an interstitial depletion of the Si; due to the presence of the silicide.

S.B.Herner, K.S.Jones, H.J.Gossmann, J.M.Poate, H.S.Luftman: Applied Physics Letters, 1996, 68[12], 1687-9