Deep-level transient spectroscopic studies were made of the interstitial Fe donor (Fei), in quenched p-type material, and of its interaction with 4d and 5d transition metals. The center was revealed by minority carrier injection of the samples, with no deliberate transition metal doping. Its emission rate signatures, variation with quenching temperature, and isothermal and isochronal annealing behaviors, were determined. A striking new property of the Fe interstitial donor was revealed by investigations of p-type samples that were doped with Ag (4d), Pd (4d), Au (5d) or Pt (5d). The deep-level transient spectroscopic signal of the Fei donor was completely bleached in the presence of these impurities, and it was suggested that Fe had a marked tendency to form complexes with these transition metal impurities.

A.Ali, M.Z.Iqbal, N.Baber, A.A.Gill: Semiconductor Science and Technology, 1996, 11[1], 129-32