Lattice defects which were created by the precipitation of interstitial O were studied by using various infra-red techniques. It was found that there was a marked dependence of the O precipitate density and size upon the initial O content and upon the thermal pre-treatment. The defect density and distribution, as measured using infra-red light scattering tomography, was correlated with Fourier-transform infra-red spectroscopic, photoluminescence and light-induced absorption carrier lifetime measurements.

J.Vanhellemont, G.Kissinger, P.Clauws, A.Kaniava, M.Libezny, E.Gaubas, E.Simoen, H.Richter, C.Claeys: Solid State Phenomena, 1996, 47-48, 229-34