The dynamic growth steps of Si(111)-(n x n) dimer-adatom stacking-fault domains in a 1 x 1 matrix were studied, on quenched (111) surfaces, by means of high-temperature scanning tunnelling microscopy. It was found that both the growth and annihilation of n x n dimer-adatom stacking-fault domains occurred with a single n x n stacking-fault half-cell as the basic building block. Not only 7 x 7, but also 9 x 9 dimer-adatom stacking-fault domains, were observed to expand gradually on the quenched surface at temperatures above 450C. Every type of n x n dimer-adatom stacking-fault domain grew via the successive addition of single stacking-fault half-cells to the side of an n x n dimer-adatom stacking-fault domain. The structural transformation of 7 x 7 and 11 x 11 stacking-fault half-cells into 9 x 9 stacking-fault half-cells occurred at a 9 x 9 domain-side; to form a large 9 x 9 dimer-adatom stacking-fault domain on the quenched Si(111) surface.

K.Kumamoto, T.Hoshino, K.Kokubun, T.Ishimaru, I.Ohdomari: Physical Review B, 1996, 53[19], 12907-11