The onset of reactions at the interfaces of thin-film structures was studied. In order to activate and control the reactions, most samples were dynamically heated in a differential scanning calorimeter while some were treated isothermally. After dynamic heat treatment at a heating rate of 0.670C/s, between room temperature and various higher temperatures, the samples were characterized by means of Auger electron spectroscopic depth profiling. The results were compared with those for as-deposited samples. The main migrating elements in the early stages of diffusion were identified by observing interface movement, and changes in the shape and the depth resolution of the depth profiles. The interdiffusion coefficient could be deduced from the rate of change of the interface width with increasing temperature.

A.Zalar, S.Hofmann, F.Pimentel, D.Kohl, P.Panjan: Vacuum, 1995, 46[8-10], 1077-81