Crystalline samples were implanted with B (80keV, 2 x 1015/cm2), and annealed so as to produce layers with various secondary defect densities. The quality and the characteristics of the oxide layers which were grown on the various surfaces were found to depend upon the defects which were present in the layer beneath it. It was found that the oxide quality was improved by using implanted and annealed material with a defect-free surface. Contamination with Fe (up to 1015/cm2), did not affect oxide layers which were grown on non-implanted wafers, but degraded the oxide characteristics of layers which were grown onto implanted and annealed samples. This degradation decreased when the residual damage was reduced by annealing.

G.Franco, V.Raineri, F.Frisina, E.Rimini: Nuclear Instruments and Methods in Physics Research B, 1995, 96[1-2], 99-103