It was found that the passivation, with molecular H, of Pb0 and Pb1 defects in (100)Si/SiO2 (grown at up to 475C) could be explained in terms of the same defect-H reaction-limited kinetic model which had been applied to interfacial Pb defects in (100)Si/SiO2 that had been prepared at 850C. Whereas Pb was associated with a single value (1.66eV) of activation energy, both Pb0 and Pb1 exhibited a Gaussian spread of 0.15eV around their respective mean values of 1.51 and 1.57eV. Such a spread was consistent with previous electron spin resonance data on stress-induced structural variations.

A.Stesmans: Applied Physics Letters, 1996, 68[15], 2076-8