Photoluminescence techniques were used to measure the broadening of thin (1.2 to 7.7nm) quantum wells under typical rapid thermal annealing conditions (800 to 1000C, 300s). So-called ‘No-phonon’ transition energy shifts of up to 0.065eV were measured. The results were analyzed by taking account of the initial diffusion during growth, increases in quantum-well band-gaps due to intermixing, and a decrease in quantum confinement. The interdiffusivity data exhibited Arrhenius behavior, and an activation energy of 2.7eV was deduced.

H.Lafontaine, D.C.Houghton, N.Rowell, G.C.Aers, R.Rinfret: Journal of Crystal Growth, 1995, 157, 57-60