The first experimental investigation was made of individual dislocation dynamics in single crystals of this alloy. The average dislocation velocities were plotted versus temperature, and the data were compared with those for Si and Ge crystals. It was estimated that the activation enthalpy for dislocation motion was equal to 2.07eV in the case of 60 dislocations, and equal to 2.11eV in the case of screw dislocations. The application of intermittent loads made it possible to clarify the nature of the starting stress for dislocation motion in SiGe.

J.L.Iunin, V.I.Nikitenko, V.I.Orlov, N.V.Abrosimov, S.N.Rossolenko, W.Schröder: Solid State Phenomena, 1996, 47-48, 425-30