It was shown that images of crystal defects could be produced by ion channelling, using a scanned focused beam of MeV protons. With the beam aligned along a channelling direction in the crystal, the protons which passed through thinned samples were detected and the resultant images revealed the mean transmitted proton energy loss. Regions were revealed where de-channelling occurred due to the presence of a defect. The images of groups of misfit dislocations in epitaxial SiGe on Si revealed the lattice plane rotation that was produced by the defects. Stacking faults were also imaged, and a proper choice of planar channelling direction permitted information on the translation vector of the fault to be obtained.

P.J.C.King, M.B.H.Breese, P.R.Wilshaw, P.J.M.Smulders, C.W.Grime: Nuclear Instruments and Methods in Physics Research B, 1995, 99, 419-22