The properties of Zn1-yMgySxSe1-x epilayers that had been grown by means of low-pressure metalorganic vapor phase epitaxy were investigated. The x and y values of the layers were varied between 0 and 0.2. Photoluminescence measurements were performed at temperatures ranging from 14 to 300K. A comparison of the measured band-edge photoluminescence half-width, with the calculated alloy broadening, revealed a high compositional homogeneity of samples with S and Mg contents of less than 0.16, and poor homogeneity in samples with large x and y values. Scanning transmission electron microscopy revealed the presence of a low density of structural defects in samples with narrow band-edge emission and low x and y values. On the other hand, a high defect density was detected in samples with large band-edge broadening. These results were correlated with observations of symmetrical and asymmetrical profile shapes, respectively, for the broadened X-ray rocking curves.

H.Hamadeh, J.Söllner, J.Hermans, U.Küster, J.Woitok, J.Geurts, B.Bollig, M.Heuken: Journal of Crystal Growth, 1996, 159, 21-5