A study was made of the growth of pseudomorphic ZnSSe layers on GaAs. The use of a Zn treatment, before ZnSe buffer growth onto the As-rich GaAs surface, gave the lowest defect density. Transmission electron microscopic studies showed that an atomically smooth interface was formed. On the basis of etch-pit densities and photoluminescence images, it was concluded that ZnSSe layers with a defect density of less than 10000/cm2 could be reproducibly obtained.

B.J.Wu, G.M.Haugen, J.M.DePuydt, L.H.Kuo, L.Salamanca-Riba: Applied Physics Letters, 1996, 68[20], 2828-30