Micro-Raman spectroscopy was used to measure the depth profiles of halogen aggregates in irradiated and bombarded samples. After using Ar ions (13.6MeV/A), it was shown that the In- clusters were significantly enhanced, at the expense of I3- defects, in the region of large excitation density which was near to the maximum in electronic energy loss. The fluence-dependence showed that the number of I3- defects progressively increased, with increasing fluence, at all depths in the damaged region.

M.A.Pariselle, S.Lefrant, E.Balanzat, B.Ramstein, J.D.Comins: Physical Review B, 1996, 53[17], 11365-8