Thermally grown oxide films on crystalline Si were implanted with 120keV Si ions to a dose of 2 x 1016/cm2. It was found that, under ultra-violet excitations of about 5eV, the implanted film exhibited a blue luminescence with a peak of about 2.7eV at room temperature. The blue emission was attributed to the presence of O vacancies in the films.

L.S.Liao, X.M.Bao, X.Q.Zheng, N.S.Li, N.B.Min: Applied Physics Letters, 1996, 68[6], 850-2