Buried nitride films that had been formed by the implantation of 35keV N+ ions into Si, to doses ranging from 2 x 1017 and 2 x 1018/cm2, were studied. It was found that the N-rich nitrides were characterized by the presence of N dangling bonds which introduced a characteristic resonance line into NEXAFS spectra, and caused a slight reduction in the coordination number. All of the buried nitride films were characterized by bond lengths which were comparable to those of a reference nitride sample.

E.C.Paloura, A.Mertens, W.Frentrup, U.Dobler, A.Knop, W.Braun: Physica B, 1995, 208-209[1-4], 509-10