Film samples were grown by means of molecular-beam epitaxy, and domain structures in the films were examined by means of transmission electron microscopy. It was demonstrated that orientation domains did not necessarily form when using (001)GaAs substrates, while antiphase domains could be eliminated by annealing the films in the presence of a Se beam. The annealing temperatures were equal to 400C for CuInSe2, and to 450C for CuGaSe2. Photoluminescence measurements of an annealed CuInSe2 film revealed a decrease in the intensity of the optical emissions which were associated with antisite defects and the enhancement of near-bandedge emission intensity.

B.H.Tseng, S.B.Lin, G.L.Gu, W.Chen: Journal of Applied Physics, 1996, 79[3], 1391-6