Crystals were grown by using the travelling heater method, with pure In or Cu-40at%In as solvents. By using the pure In or Cu-In solvents, n-type or p-type conduction, respectively, were obtained. Photoluminescence spectra revealed characteristic features which depended upon the solvent. In the case of n-type material, the origins of the emissions were identified as being free excitons and VSe. In the case of p-type material, the sources were free excitons, CuIn and VSe. Emission intensity measurements indicated that excitonic emission predominated in crystals which had been grown by using the travelling heater method, and increased from the bottom to the top of the crystals, while the lattice defect density was almost constant. The results for crystals which had been grown by using the travelling heater method contrasted with those obtained from crystals which had been prepared by using the Bridgman method; where non-radiative recombination centers predominated.

M.Yoshimi, S.Kohno, Y.Noda: Journal of the Japan Institute of Metals, 1995, 59[12], 1315-21