The behavior of I in yttria-stabilized material was investigated as a function of temperature. Implantation of I into the cubic solid solution was performed by bombarding the samples with 1MeV I ions. The I distribution was evaluated by using computer calculations, and was measured by means of 5MeV 4He Rutherford back-scattering spectroscopy. The I profile was determined after successive temperature steps. At each step, the maximum temperature was held for 2h. It was found that the I profile remained unchanged at up to 1373K. At 1573K, the I diffused significantly. The I profile was measurable up to 1773K. Even at this high temperature, significant I retention was observed. The associated I diffusion coefficient, 3.5 x 10-15cm2/s, was of the same order as that predicted by extrapolating data on I in monoclinic/tetragonal zirconia.

Retention of Iodine in Yttria Stabilized Zirconia. M.A.Pouchon, M.Dobeli, C.Degueldre: Nuclear Instruments and Methods in Physics Research B, 1999, 148[1-4], 783-6