The formation of acceptor-H complexes was studied in Cd-doped ternary III-V compounds. By using the perturbed  angular correlation technique, with radioactive 111mCd acceptors, the interaction between Cd acceptors and H which had been introduced by 100eV implantation was quantitatively determined. The observed formation probability of Cd-H complexes, and their hyperfine interaction parameters, were compared with those which were observed for binary compounds such as GaAs, AlAs, InAs, InP and GaP.

A.Burchard, M.Deicher, D.Forkel-Wirth, J.Freidinger, T.Kerle, R.Magerle, W.Pfeiffer, W.Prost, P.Wellmann, A.Winnacker, Isolde: Materials Science Forum, 1995, 196-201, 987-92