A new Si-related local vibrational mode absorption in bulk material was reported. It consisted of 6 peaks which were grouped in a distinct pattern around 450/cm. The dependence of this local vibrational mode absorption pattern upon the alloy composition, doping level and temperature was studied. It was proposed that the new local vibrational mode absorption was the fingerprint of a single defect. The most plausible structure was that of a SiGa-SiAs pair complex, with a SiAs acceptor interacting with various Ga and Al nearest-neighbor local environments.

P.Kaczor, Z.R.Zytkiewicz, L.Dobaczewski: Materials Science Forum, 1995, 196-201, 1091-6