Metalorganic vapor-phase epitaxial growth experiments on GaAs and AlGaAs were performed, as a function of growth temperature and V/III ratio, by using a new alternative precursor (diethyl-tert-butylarsine) in conjunction with trimethylgallium and trimethylaluminum. The incorporation of deep traps was investigated by means of photoluminescence and deep-level transient Fourier spectroscopy. In the case of AlGaAs layers which had been grown with the aid of diethyl-tert-butylarsine, a drastic reduction in the deep broad band luminescence between 1.5 and 2eV was observed, depending upon the growth conditions. A probably deep complex defect which involved an As vacancy was observed in AlGaAs layers which had been grown with the aid of diethyl-tert-butylarsine. In the case of GaAs layers which had been grown by using diethyl-tert-butylarsine or AsH3, the predominant deep trap was the EL2 defect. Deep-level photoluminescence studies revealed a reduced incorporation of the EL2 defect, when compared with AsH3-grown layers; due to a smaller V/III ratio. The resultant low deep-defect concentration, especially in GaAs layers, confirmed the great potential value of diethyl-tert-butylarsine precursor as a substitute for AsH3.

Z.Spika, G.Zimmermann, W.Stolz, E.O.Göbel, P.Gimmnich, J.Lorberth, A.Greiling, A.Salzmann, S.Weiss, U.Sudjadi, A.Bock, R.Kassing: Journal of Crystal Growth, 1995, 146[1-4], 521-6