Etch pits on GaAsP which had been grown onto Si substrates, and etch hillocks on AlGaAs which had been grown onto Si, were revealed by a using a solution of HF and HNO3. Series of etch-pit observations showed that these etch pits and hillocks corresponded to the presence of dislocations.

H.Nishikawa, T.Soga, T.Jimbo, M.Umeno: Materials Science Forum, 1995, 196-201 1923-6