An analysis of the decomposition products of 400keV electron beam irradiated undoped, Cu-doped or In-doped CdTe demonstrated how dopant species affected secondary defect formation. The tendency to an initial formation of Cd oxides implied the occurrence of preferential anion removal, leading to accelerated oxidation. The electron beam irradiation of ZnS removed extrinsic dislocation loops, which resulted from Ar ion milling, before void formation. The migration of point defect clusters within electron beam irradiated ZnS, and the evolution of electron beam induced damage in the presence of defects and interfaces, were investigated.

J.Y.Loginov, P.D.Brown, C.J.Humphreys: Materials Science Forum, 1995, 196-201, 1461-6