Facets of (110)-type were formed, on mesa edges which defined (100)-(110) facet structures, by the molecular beam epitaxial growth of GaAs onto [001]-mesa stripes on (100) GaAs substrates. The surface diffusion length of Ga adatoms along the [010] direction on the mesa stripes was estimated for various growth conditions by means of  in situ  scanning microprobe reflection high-energy electron diffraction. By using these values, and the corresponding growth rate on the (110) GaAs facets, the diffusion length on the (110) plane was deduced (figure 1). It was found that the Ga diffusion length on the (110) plane was greater than that on the (100) and (111)B planes. The long diffusion length on the (110) plane was explained in terms of the particular surface reconstruction on this plane.

M.López, Y.Nomura: Journal of Crystal Growth, 1995, 150[1-4], 68-72