The results of investigations of transitions among the sites and charge states of muonium in these materials were summarized. Energy parameters were determined for the full description of muonium dynamics in Si, and were found to correlate well with available data for H. A model was developed which accounted for all of the major features which were observed. Its validity for a wide range of dopant concentrations, using a single set of parameters, reflected its predictive strength. The near equality of the energy parameters for muonium in Si, as compared with those which were available for H, strongly implied that the results for muonium dynamic behavior should be applicable to H, with very little change. The model which was developed for Si could be applied to all tetrahedrally coordinated semiconductors, with few modifications, and served as a basis for the understanding of muonium dynamics and therefore for the behavior of H in GaAs and other materials. Differences in H properties could be understood by examining material-specific deviations from the basic model.

R.L.Lichti, C.Schwab, T.L.Estle: Materials Science Forum, 1995, 196-201, 831-6