The introduction kinetics, electronic properties and electric field-assisted emission behavior of a metastable defect, E3, which was introduced by -particle bombardment of Si-doped material, were investigated by means of deep-level transient spectroscopy. It was shown that E3 was introduced, after irradiation, via a first-order process during annealing at temperatures above 280K. It was metastable, and its energy level could be reproducibly removed by hole injection at 90 to 130K and re-introduced by annealing at temperatures above 160K. Under low electric fields, the electronic properties of E3 were similar to, yet clearly discernible from, those of the well-known radiation-induced defect, E3. Deep-level transient spectroscopic measurements, under various electric fields, showed that electron emission from E3 was much less enhanced by an electric field than was emission from E3. It was possible to detect E3 in Si-doped material but not in undoped material.

F.D.Auret, S.A.Goodman, W.E.Meyer: Materials Science Forum, 1995, 196-201, 1067-72