The defects which were introduced by the electron irradiation of epitaxially grown Si-doped n-type material were investigated by means of deep-level transient spectroscopy. Another electron trap, E3, was detected in addition to the well-known irradiation-induced defects, E1 to E3. Its electronic properties were similar, but not identical, to those of E3. The E3 was metastable, and its energy level could be reproducibly removed by hole injection at 90 to 130K, and re-introduced by annealing at temperatures above 160K. The E3 could be produced, by electron irradiation, in Si-doped material but not in undoped material.

F.D.Auret, S.A.Goodman, W.E.Meyer: Applied Physics Letters, 1995, 67[22], 3277-9