A systematic study was made of the defects which were produced by 2MeV electron irradiation at 4K. Annealing at temperatures of between 90 and 600K was carried out, and the defect formation and annealing behavior was studied in undoped, n-type and p-doped material as a function of fluences of between 1015 and 1019/cm2. The annealing stage of the Ga mono-vacancy occurred at temperatures below 100K. A defect complex, which annealed in a main stage at 300K, was found in all of the samples after irradiation. This defect was suggested to be a mono-vacancy-antisite complex.

A.Polity, C.Nagel, R.Krause-Rehberg: Materials Science Forum, 1995, 196-201, 1249-54