Typical dislocation atmospheres in various n-type wafers were studied by means of photo-etching, scanning electron microscopic, electron beam-induced current, and micro-Raman spectroscopic techniques. The local crystal misorientations, carrier depletion depths, local doping and residual strains which were associated with these defects were studied.

P.Martin, J.Jimenez, C.Frigeri, J.Weyher, K.Sonnenberg: Materials Science Forum, 1995, 196-201, 1791-6