It was noted that plasma-induced deactivation centers in n-type and p-type material were redistributed by reverse bias annealing. The centers in n-type Si-doped material were negative, so that they deactivated Si donors in the as-irradiated state but changed their charge state to positive under reverse bias annealing and reactivated Si donors near to the surface. The centers in p-type Zn-doped material were positive, deactivated Zn acceptors in the as-irradiated state, and drifted deeper into the bulk during reverse bias annealing. They preserved their charge states. This reactivated Zn acceptors near to the surface, and deactivated them deeper in the bulk. These dopants were predominantly deactivated by complex formation, rather than by charge compensation. It was suggested that these deactivation centers might be self-interstitials.

K.Wada, H.Nakanishi, L.C.Kimerling: Materials Science Forum, 1995, 196-201, 1401-6