It was recalled that the characteristic lifetimes of radioactive isotopes could be used to label and identify the defect levels in semiconductors which could be detected by means of photoluminescence techniques. This was demonstrated for material which was doped with radioactive 111In. During its decay to 111Cd all of the photoluminescence peaks, in which Cd acceptors were involved, increased. By deriving a quantitative relationship between the photoluminescence intensity and the Cd concentration, it was shown that this intensity increase was determined only by the nuclear lifetime of 111In. In this was, it was possible to obtain a complete and independent identification of the Cd-related photoluminescence peaks.

R.Magerle, A.Burchard, R.Kerle, W.Pfeiffer, M.Deicher: Materials Science Forum, 1995, 196-201, 1503-8