The effect of a uniaxial pressure upon the 1.18eV photoluminescence band was studied in n-type material which had been doped with Te, S, Sn or Si. Reorientation of the Jahn-Teller distortions, and their alignment under uniaxial pressure at 2K, were found for the VGaTeAs, VGaSnGa and VGaSiGa complexes. A comparison of the latter 2 complexes showed that SiGa had a greater effect than SnGa upon the VGa state.

A.A.Gutkin, N.S.Averkiev, M.A.Reshchikov, V.E.Sedov: Materials Science Forum, 1995, 196-201, 231-6