An investigation was made of the stress dependence of the 0.95eV photoluminescence band in material which had been doped with Te, S, Sn or Si. This band was usually attributed to a complex which included a di-vacancy, VAsVGa. A differing behavior of the band in materials with different dopants suggested that the complex also involved a shallow donor, D. An alignment of the Jahn-Teller distortions was found at 2K. It was similar to that of VGaD complexes, and occurred via 2 steps in material which was doped with Sn or Si.

M.A.Reshchikov, A.A.Gutkin, V.E.Sedov: Materials Science Forum, 1995, 196-201, 237-42